GESEC R&D Inc. has a proprietary technique, based on a chemical reaction, for growth of thick epitaxial GaAs layer, low cost and non-polluting. Two and four inches non-intentional doped epitaxial GaAs layers (up to 600 µm thickness) are grown on n⁺or semi-insulating substrates. Self-supported layers are fabricated by removing completely the substrate.

With these layers, p⁺/i/n⁺and Schottky structure detectors are fabricated for X-ray imaging applications. The technological processes are performed in a clean room facilities of a micro and nanotechnological center.