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| Publications |
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Thick epitaxial GaAs
material and X-ray
detectors: |
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| 1 |
Epitaxial GaAs for X-ray imaging,
G. C. Sun, R. Rao, S. Makham, J. C. Bourgoin,
et al., Nucl. Instr. and Meth., A 633, S65(2011) |
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| 2 |
Electronic characterization of several 100 µm thick epitaxial
GaAs layers, N. Talbi, K. Khirouni, G.C. Sun, et al., J. Materials Science: Materials in Electronics,
19(5), 487-492(2008). |
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| 3 |
Mobility-lifetime product of epitaxial
GaAs X-ray detectors,
G.C.
Sun, M. Zazoui, N. Talbi, K. Khirouni, J.C. Bourgoin, Nucl. Instr. and Meth., A 573, 228(2007) |
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| 4 |
Image
quality of a pixellated GaAs X-ray detector, G.C. Sun, S. Makham, J.C. Bourgoin, A.
Mauger, Nucl. Instr. and Meth., A 571, 300(2007) |
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| 5 |
X-ray detectors made of self-supported epitaxial GaAs, G.C. Sun, N. Mañez, J.C. Bourgoin, Nucl. Instr. and Meth., A
563, 13(2006) |
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| 6 |
Application
of epitaxial GaAs to medical imaging G.C. Sun, N. Mañez,
R. Rao, J.C. Bourgoin, K.M. Smith, et al., IEEE Trans. on Nucl. Sci., 53(3), 1671(2006) |
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| 7 |
State of the art on epitaxial GaAs detectors, G.C.
Sun, N. Mañez, M. Zazoui, et
al., Nucl. Instr. and Meth., A 546,140(2005) |
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| 8 |
Suitability of epitaxial GaAs for X-ray imaging, G.C.
Sun, N. Talbi, C. Verdeil, J.C. Bourgoin, Appl. Phys. Lett.,
85(12), 2399(2004) |
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| 9 |
A comparison between GaAs and CdTe for X-ray detection, G.C. Sun, H. Samic, J.C. Bourgoin,
et al., IEEE Trans. on Nucl. Sci., 51(5), 2400 (2004) |
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| 10 |
X-ray detector with thick epitaxial GaAs grown by chemical reaction, G.C. Sun, M. Lenoir, E. Breelle,
et al., IEEE Trans. on Nucl. Sci., 50(4), 1036(2003) |
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| 11 |
Laser induced pulse shapes in partially depleted epitaxial GaAs radiation detectors, Paul Sellin, H.El-Abbassi, J.C. Bourgoin, G.C. Sun, Nucl. Instr. and Meth., A 509, 65(2003) |
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| 12 |
Performance of epitaxial
GaAs radiation detectors grown by vapour-based chemical reaction, P.J. Sellin, H.El-Abbassi, S. Rath, J.C. Bourgoin, G.C.
Sun, Nucl. Instr. and Meth., A 512,
433(2003) |
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| 13 |
A method for adjusting the performances of epitaxial GaAs X-ray detectors, G.C. Sun, J.C. Bourgoin, Nucl. Instr. and Meth., A 487, 50(2002) |
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| 14 |
Characterization of thick epitaxial GaAs layers for X-ray detection, H. Samic, G.C. Sun, V. Donchev,
et al., Nucl. Instr. and Meth., A 487, 107(2002) |
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| Device
degradation: |
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| 1 |
Radiation Resistance of GaAs/GaAlAs Vertical
Cavity Surface Emitting Lasers, J.
Jabbour, M. Zazoui, G.C. Sun, J. C. Bourgoin, O. Gilard, J.
Appl. Phys., 97 043517 (2005) |
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| 2 |
Non-empirical
prediction of solar cell degradation in space, S. Makham, M. Zazoui, G.C.
Sun and J.C. Bourgoin, Semicond. Sci. and Technol., 20(8),
699(2005) |
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| 3 |
Prediction
of Solar Cell Degradation in Space from the Electron-Proton
Equivalence, M. Mbarki, G.C. Sun, J.C. Bourgoin, Semicond. Sci. Technol., 19(9)
1081(2004) |
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| 4 |
Dark current in electron irradiated GaAs/AlGaAs multiple quantum wells, V. Donchev, J.C. Bourgoin, P. Bois, Nucl. Instr. and Meth., A 517, 94 (2004) |
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| 5 |
Analysis
of multijunction solar cell degradation in space and
irradiation induced recombination centers, M.
Zazoui, M. Mbarki, A. Zin Aldin, J. C. Bourgoin, O. Gilard,
G. Strobl, J. Appl. Phys., 93(9), 5080 (2003) |
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| 6 |
Space
degradation of multijunction solar cells: An
electroluminescence study, M.
Zazoui and J. C. Bourgoin, Appl. Phys. Lett.,
80(23), 4455 (2002) |
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| 7 |
Irradiation-induced degradation in solar cell: characterization of recombination
centres, J C
Bourgoin and M Zazoui, Semicond. Sci. Technol.,
17, 453 (2002) |
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| Material and device evaluation: |
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| 1 |
Dark current through GaAs/AlGaAs multiple quantum wells, V. Donchev, J.C. Bourgoin, P. Bois, Semicond. Sci. Technol., 17, 621(2002) |
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| 2 |
Conduction mechanisms in ion-irradiated InGaAs layers, L. Joulaud, J. Mangeney, N. Chimot, P. Crozat, and G. Fishman, J.C. Bourgoin, J. Appl. Phys., 97, 063515-1 (2005) |
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