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| Services |
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| 1. Characterization and
Evaluation |
| Physical understanding of the electronic and
optoelectronic properties of materials or heterostructures and
of the behaviour of devices, based on structural, electrical
and optical characterization techniques, are
proposed. These studies take advantage of the 40 years of experience of the founder who worked on
most of the technologically important materials (Diamond,
Silicon, Germanium, Gallium Arsenide, Indium Phosphide, Indium
Arsenide, Cadmium Telluride and III-V ternary alloys: GaAlAs,
GaInP, GaInAs), and on devices such as
Metal-Oxide-Semiconductors, Field Effect Transistors, Light
Emitting Diodes, Lasers, Solar cells, Photon and Particle
detectors. |
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Electrical and optoelectrical measurement |
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| 2. Low temperature irradiation and in-situ characterization |
| Based on a wide experience on point
defects and irradiation induced defects in semiconductor
materials, irradiation tests can be performed with energetic
electrons or protons on materials and devices,
to evaluate their radiation hardness. The electrical and optical
properties of materials and performances of the devices
based on Silicon and Gallium Arsenide can be
monitored in situ, versus fluence, at temperatures between
80 and 300 K (see technical note1(pdf)). |
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Low temperature irradiation and in-situ characterization |
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| 3. Modelling of device degradation induced by irradiation (in particular for Space applications) |
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| Modeling the degradation
of the performances, based on the physics of the irradiation
induced defects, can be undertaken, in particular for the
prediction of device behaviour during space missions (see technical note2 (pdf) and technical note3(pdf)). |
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Maximum power at 1 AM0 of a 3J solar cell versus proton fluence |
Maximum power at 1 AM0 of a 3J solar cell versus temperature |
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| 4. Training and consulting |
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| An experience of consultant for
many years in the laboratory of Thales R&D and of Director of
Research in Centre National de la Recherche Scientifique
allows to propose training periods of variable time can be provided on the scientific subjects which are covered by the activity of GESEC
R&D. Engineering and consulting are also proposed, as well as facilities to support the design, prototyping and development
of micro and opto-electronic devices. |
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